Magnetoresistive property study of direct and indirect band gap thermoelectric Bi-Sb alloys

摘要

We report magnetoresistive properties of direct and indirect band gapBismuth-Antimony (Bi-Sb) alloys. Band gap increases with magnetic field. Largepositive magnetoresistance (MR) approaching to 400 % is observed. Low field MRexperiences quadratic growth and at high field it follows a nearly linearbehavior without sign of saturation. Carrier mobility extracted from low fieldMR data, depicts remarkable high value. Correlation between MR and mobility isrevealed. We demonstrate that the strong nearly linear MR at high field can bewell understood by classical method, co-build by Parish and Littlewood.